Deposition and Characterization of Heterostructures Based on Doped Ferrocene for Film-Device Applications

Novel heterostructures based on ferrocenium hexafluorophosphate (FcPF6), 2,6-dihydroxyanthraquinone (DHAQ) or 2,6-diaminoanthraquinone (DAAQ), zinc phthalocyanine (ZnPc) and nylon 11 were deposited by the high-vacuum thermal evaporation (HVTE) technique. Morphological mechanical characterizations of these organic FcPF6:DHAQ/nylon(ZnPc) FcPF6:DAAQ/nylon(ZnPc) carried out. Subsequently, corresponding optical parameters calculated. The heterostructure with FcPF6:DHAQ presented lowest band gap fundamental at 1.55 eV 2.45 eV, respectively. nylon(ZnPc) layer favors behavior places within low-bandgap semiconductor range. Additionally, devices fabricated, their electrical was evaluated. ITO/FcPF6:DHAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior, ITO/FcPF6:DAAQ/nylon(ZnPc)/Ag low voltages, but V ≥ 5 V, its changes to Space Charge Limited Current (SCLC). This carries a maximum current 0.02 A, three orders magnitude higher than DHAQ. SCLC conduction mechanism showed hole mobility 9.27 × 10−8 (cm2)/Vs, concentration thermally excited holes 3.01 1023 m−3, trap 3.93 1021 m−3. are potential candidates for as an emitter active layer,